STP80L60 - описание и поиск аналогов

Green Product STB/P80L60 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). VDSS ID RDS(ON) (m ) Typ High power and current handling capability. 60V 80A 8.0 @ VGS=10V TO-220 & TO-263 package. D G STP SERIES STB SERIES TO-220 TO-263(DD-P AK) S

STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V

STP80NF10FP N-channel 100V - 0.012 - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID(1) STP80NF10FP 100V

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-08/-1 55 V

STP80N03L-06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA TYPE V R I DSS DS(on) D STP80N03L-06 30 V

STB80NF10 STP80NF10 N-channel 100 V, 0.012 , 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF10 100 V

STP80NS04ZB N-CHANNEL CLAMPED 7.5m - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NS04ZB CLAMPED

STP80NF70 N-channel 68 V, 0.0082 , 98 A, TO-220 STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF70 68 V

STP80NF75L STB80NF75L STB80NF75L-1 N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF75L 75 V

STB80PF55 STP80PF55 P-channel 55 V, 0.016 , 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type VDSS RDS(on) ID STP80PF55 55V

STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL RDS(on) = 0.0065 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCR

STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF03L-04/-1 30 V

STP80NF03L N-CHANNEL 30V - 0.004 - 80ATO-220 STripFET II MOSFET TYPE VDSS RDS(on) ID STP80NF03L 30 V

STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features RDS(on) Type VDSS ID max 3 STB80NF55-08T4 55 V

STP80NS04Z N-CHANNEL CLAMPED 7.5m - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STP80NS04Z CLAMPED

STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(o n) ID STP80NE03L-06 30 V

STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS(on) ID STB80NF06 60V

STP80NF75L STB80NF75L STB80NF75L-1 N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF75L 75 V

STP80N70F4 N-channel 68 V, 8.2 m typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package Datasheet production data Features Order code VDSS RDS(on) max ID STP80N70F4 68 V

STB80N20M5 STP80N20M5 N-channel 200 V, 0.019 , 61 A, TO-220, D2PAK MDmesh V Power MOSFET Features VDSS @ RDS(on) Type ID TJmax max STB80N20M5 61 A 200 V

STP80N6F6 Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID TAB STP80N6F6 60 V 5 m 80 A(1) 1. Current limited by package 3 Designed for automotive applications and 2 1 AEC-Q101 qualified Low gate charge TO-220 Very low on-resistance

STP80NF10 STP80NF10FP N-CHANNEL 100V - 0.012 - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF10 100 V

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID PTOT TJmax max 1 DPAK 3 STD80N10F7 0.01 70 A 85 W 2 1 TO-220FP STF80N10F7 0.01 40 A 30 W 100 V TAB TAB STH80N10F7-2 0.0095 80 A

STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP80NE03L-06 30 V

STP80NF12 N-channel 120 V, 0.013 , 80 A, TO-220 STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF12 120 V

STP80PF55 P-CHANNEL 55V - 0.016 - 80A TO-220 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB80PF55 55 V

STP80N70F6 N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 package Datasheet - production data Features TAB VDSS Order code RDS(on) max. ID PTOT max.

STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP80N06-10 60 V

STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V

STP80NE06-10 N-CHANNEL 60V - 0.0085 - 80A TO-220 "SINGLE FEATURE SIZE " MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STP80NE06-10 60 V

STP80N05-09 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP80N05-09 50 V

STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL RDS(on) = 0.0065 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESC

STP80NF55-07 N - CHANNEL 55V - 0.0055 - 80A - TO-220 STripFET POWER MOSFET TARGET DATA TYPE VDSS RDS(on) ID STP80NF55-07 55 V

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP80NF55-06 FEATURES Typical R (on)=0.005 DS Excellent switching performance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenoid and relay drivers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T

isc N-Channel MOSFET Transistor STP80NF12 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

isc P-Channel MOSFET Transistor STP80PF55 FEATURES Drain Current I = -80A@ T =25 D C Drain Source Voltage V = -55V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) @ V = -10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP80N10F7 FEATURES Extremely low gate charge Ultra low on-resistance Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-