HMS170N03D Datasheet. Specs and Replacement
Type Designator: HMS170N03D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 170 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 1550 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00165 Ohm
Package: DFN5X6-8L
HMS170N03D substitution
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HMS170N03D datasheet
hms170n03d.pdf
HMS170N03D N-Channel Super Trench Power MOSFET Description The HMS170N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒
hms17n65 hms17n65f hms17n65d.pdf
HMS17N65D, HMS17N65, HMS17N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 210 m gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app... See More ⇒
Detailed specifications: HMS15N65I, HMS15N65K, HMS15N70, HMS15N70B, HMS15N70D, HMS15N70F, HMS15N70I, HMS15N70K, IRF530, HMS17N65, HMS17N65D, HMS17N65F, HMS18N10D, HMS18N10Q, HMS18N80, HMS18N80F, HMS200N04D
Keywords - HMS170N03D MOSFET specs
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