HMS17N65F Datasheet. Specs and Replacement

Type Designator: HMS17N65F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO220F

HMS17N65F substitution

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HMS17N65F datasheet

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 hms17n65 hms17n65f hms17n65d.pdf pdf_icon

HMS17N65F

HMS17N65D, HMS17N65, HMS17N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 210 m gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app... See More ⇒

 9.1. Size:620K  cn hmsemi
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HMS17N65F

HMS170N03D N-Channel Super Trench Power MOSFET Description The HMS170N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒

Detailed specifications: HMS15N70B, HMS15N70D, HMS15N70F, HMS15N70I, HMS15N70K, HMS170N03D, HMS17N65, HMS17N65D, AON7506, HMS18N10D, HMS18N10Q, HMS18N80, HMS18N80F, HMS200N04D, HMS20N15K, HMS21N60, HMS21N60A

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