All MOSFET. HMS17N65F Datasheet

 

HMS17N65F Datasheet and Replacement


   Type Designator: HMS17N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO220F
 

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HMS17N65F Datasheet (PDF)

 ..1. Size:1308K  cn hmsemi
 hms17n65 hms17n65f hms17n65d.pdf pdf_icon

HMS17N65F

HMS17N65D, HMS17N65, HMS17N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 210 m gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power app

 9.1. Size:620K  cn hmsemi
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HMS17N65F

HMS170N03DN-Channel Super Trench Power MOSFET Description The HMS170N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

Datasheet: HMS15N70B , HMS15N70D , HMS15N70F , HMS15N70I , HMS15N70K , HMS170N03D , HMS17N65 , HMS17N65D , IRFP250 , HMS18N10D , HMS18N10Q , HMS18N80 , HMS18N80F , HMS200N04D , HMS20N15K , HMS21N60 , HMS21N60A .

History: NVJD5121N | TPCS8303 | AOLF66610 | DH100P35F | 2SK2551 | FDP20N40 | NDB610B

Keywords - HMS17N65F MOSFET datasheet

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