All MOSFET. HMS21N60F Datasheet

 

HMS21N60F Datasheet and Replacement


   Type Designator: HMS21N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

 HMS21N60F substitution

   - MOSFET ⓘ Cross-Reference Search

 

HMS21N60F Datasheet (PDF)

 ..1. Size:1054K  cn hmsemi
hms21n60 hms21n60f.pdf pdf_icon

HMS21N60F

HMS21N60,HMS21N60FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applica

 6.1. Size:978K  cn hmsemi
hms21n60a.pdf pdf_icon

HMS21N60F

HMS21N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. F

 7.1. Size:779K  cn hmsemi
hms21n65a.pdf pdf_icon

HMS21N60F

HMS21N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

 7.2. Size:817K  cn hmsemi
hms21n65 hms21n65f.pdf pdf_icon

HMS21N60F

HMS21N65,HMS21N65FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications

Datasheet: HMS18N10D , HMS18N10Q , HMS18N80 , HMS18N80F , HMS200N04D , HMS20N15K , HMS21N60 , HMS21N60A , 5N65 , HMS21N65 , HMS21N65A , HMS21N65F , HMS21N70 , HMS21N70A , HMS21N70F , HMS25N65 , HMS25N65D .

History: IRFSL3107PBF | AON6206

Keywords - HMS21N60F MOSFET datasheet

 HMS21N60F cross reference
 HMS21N60F equivalent finder
 HMS21N60F lookup
 HMS21N60F substitution
 HMS21N60F replacement

 

 
Back to Top

 


 
.