All MOSFET. HMS21N70 Datasheet

 

HMS21N70 Datasheet and Replacement


   Type Designator: HMS21N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220
 

 HMS21N70 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HMS21N70 Datasheet (PDF)

 ..1. Size:929K  cn hmsemi
 hms21n70 hms21n70f.pdf pdf_icon

HMS21N70

HMS21N70,HMS21N70FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 165 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power application

 0.1. Size:836K  cn hmsemi
 hms21n70a.pdf pdf_icon

HMS21N70

HMS21N70AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 165 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Feature

 8.1. Size:978K  cn hmsemi
 hms21n60a.pdf pdf_icon

HMS21N70

HMS21N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. F

 8.2. Size:779K  cn hmsemi
 hms21n65a.pdf pdf_icon

HMS21N70

HMS21N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

SHOW MORE

Datasheet: HMS200N04D , HMS20N15K , HMS21N60 , HMS21N60A , HMS21N60F , HMS21N65 , HMS21N65A , HMS21N65F , IRFZ46N , HMS21N70A , HMS21N70F , HMS25N65 , HMS25N65D , HMS25N65F , HMS28N65 , HMS28N65D , HMS28N65F .

History: APT6029SLL | AON6530 | DMN4010LK3 | UPA1951 | NX3020NAKS | PT530BA | NCE65N800K

Keywords - HMS21N70 MOSFET datasheet

 HMS21N70 cross reference
 HMS21N70 equivalent finder
 HMS21N70 lookup
 HMS21N70 substitution
 HMS21N70 replacement

 

 
Back to Top

 


 
.