HMS21N70 MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS21N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220
HMS21N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS21N70 Datasheet (PDF)
hms21n70 hms21n70f.pdf
HMS21N70,HMS21N70FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 165 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power application
hms21n70a.pdf
HMS21N70AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 165 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Feature
hms21n60a.pdf
HMS21N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. F
hms21n65a.pdf
HMS21N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features
hms21n60 hms21n60f.pdf
HMS21N60,HMS21N60FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applica
hms21n65 hms21n65f.pdf
HMS21N65,HMS21N65FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HM9436
History: HM9436
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918