HMS21N70 - аналоги и даташиты транзистора

 

HMS21N70 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: HMS21N70
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для HMS21N70

   - подбор ⓘ MOSFET транзистора по параметрам

 

HMS21N70 Datasheet (PDF)

 ..1. Size:929K  cn hmsemi
 hms21n70 hms21n70f.pdf pdf_icon

HMS21N70

HMS21N70,HMS21N70FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 165 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power application

 0.1. Size:836K  cn hmsemi
 hms21n70a.pdf pdf_icon

HMS21N70

HMS21N70AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 165 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Feature

 8.1. Size:978K  cn hmsemi
 hms21n60a.pdf pdf_icon

HMS21N70

HMS21N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. F

 8.2. Size:779K  cn hmsemi
 hms21n65a.pdf pdf_icon

HMS21N70

HMS21N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HMS200N04D , HMS20N15K , HMS21N60 , HMS21N60A , HMS21N60F , HMS21N65 , HMS21N65A , HMS21N65F , SI2302 , HMS21N70A , HMS21N70F , HMS25N65 , HMS25N65D , HMS25N65F , HMS28N65 , HMS28N65D , HMS28N65F .

History: NTD14N03R-1G | SSP20N60S | IPB038N12N3G

 

 
Back to Top

 


 
.