HMS25N65 Datasheet and Replacement
Type Designator: HMS25N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO220
HMS25N65 substitution
HMS25N65 Datasheet (PDF)
hms25n65 hms25n65d hms25n65f.pdf

HMS25N65/HMS25N65D/HMS25N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 115 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind
Datasheet: HMS21N60A , HMS21N60F , HMS21N65 , HMS21N65A , HMS21N65F , HMS21N70 , HMS21N70A , HMS21N70F , 2N60 , HMS25N65D , HMS25N65F , HMS28N65 , HMS28N65D , HMS28N65F , HMS28N65T , HMS29N65 , HMS29N65D .
History: NTMD4N03 | IXTQ74N20P | SL8N100K | RFP8P05 | INK0001AM1 | STF45N65M5 | SWD5N65K
Keywords - HMS25N65 MOSFET datasheet
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History: NTMD4N03 | IXTQ74N20P | SL8N100K | RFP8P05 | INK0001AM1 | STF45N65M5 | SWD5N65K



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