All MOSFET. HMS25N65 Datasheet

 

HMS25N65 Datasheet and Replacement


   Type Designator: HMS25N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO220
 

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HMS25N65 Datasheet (PDF)

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HMS25N65

HMS25N65/HMS25N65D/HMS25N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 115 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind

Datasheet: HMS21N60A , HMS21N60F , HMS21N65 , HMS21N65A , HMS21N65F , HMS21N70 , HMS21N70A , HMS21N70F , IRF530 , HMS25N65D , HMS25N65F , HMS28N65 , HMS28N65D , HMS28N65F , HMS28N65T , HMS29N65 , HMS29N65D .

History: DH160P03V | NTD4804N-1G | SWP058R75E7T | APT5016BFLL | FQU4N25TU | SSM3K329R | AP6N3R7MT

Keywords - HMS25N65 MOSFET datasheet

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