HMS25N65D Datasheet. Specs and Replacement
Type Designator: HMS25N65D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO263
HMS25N65D substitution
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HMS25N65D datasheet
hms25n65 hms25n65d hms25n65f.pdf
HMS25N65/HMS25N65D/HMS25N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 115 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind... See More ⇒
Detailed specifications: HMS21N60F, HMS21N65, HMS21N65A, HMS21N65F, HMS21N70, HMS21N70A, HMS21N70F, HMS25N65, IRF520, HMS25N65F, HMS28N65, HMS28N65D, HMS28N65F, HMS28N65T, HMS29N65, HMS29N65D, HMS29N65F
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