All MOSFET. HMS28N65T Datasheet

 

HMS28N65T Datasheet and Replacement


   Type Designator: HMS28N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO247
 

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HMS28N65T Datasheet (PDF)

 ..1. Size:676K  cn hmsemi
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HMS28N65T

HMS28N65TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appli

 6.1. Size:792K  cn hmsemi
 hms28n65 hms28n65d hms28n65f.pdf pdf_icon

HMS28N65T

HMS28N65/HMS28N65D/HMS28N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind

Datasheet: HMS21N70A , HMS21N70F , HMS25N65 , HMS25N65D , HMS25N65F , HMS28N65 , HMS28N65D , HMS28N65F , K2611 , HMS29N65 , HMS29N65D , HMS29N65F , HMS3205 , HMS3205D , HMS35DN10DA , HMS35N10K , HMS38N60T .

History: 2SK3546J | AP30T10GH

Keywords - HMS28N65T MOSFET datasheet

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