HMS29N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS29N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 29 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37.5 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 120 pF
Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
Package: TO220
HMS29N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS29N65 Datasheet (PDF)
..1. Size:1005K cn hmsemi
hms29n65 hms29n65d hms29n65f.pdf
hms29n65 hms29n65d hms29n65f.pdf
HMS29N65/HMS29N65D/HMS29N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 96 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
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