All MOSFET. HMS29N65 Datasheet

 

HMS29N65 Datasheet and Replacement


   Type Designator: HMS29N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO220
 

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HMS29N65 Datasheet (PDF)

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HMS29N65

HMS29N65/HMS29N65D/HMS29N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 96 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

Datasheet: HMS21N70F , HMS25N65 , HMS25N65D , HMS25N65F , HMS28N65 , HMS28N65D , HMS28N65F , HMS28N65T , AO3401 , HMS29N65D , HMS29N65F , HMS3205 , HMS3205D , HMS35DN10DA , HMS35N10K , HMS38N60T , HMS4030 .

History: VBQF2309 | HGI110N10SL | MPSW65M046CFD | NCE50NF220K | FHU2N60A | 2SJ409L | APT20M40HVR

Keywords - HMS29N65 MOSFET datasheet

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