All MOSFET. HMS29N65F Datasheet

 

HMS29N65F Datasheet and Replacement


   Type Designator: HMS29N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO220F
 

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HMS29N65F Datasheet (PDF)

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HMS29N65F

HMS29N65/HMS29N65D/HMS29N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 96 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

Datasheet: HMS25N65D , HMS25N65F , HMS28N65 , HMS28N65D , HMS28N65F , HMS28N65T , HMS29N65 , HMS29N65D , RU6888R , HMS3205 , HMS3205D , HMS35DN10DA , HMS35N10K , HMS38N60T , HMS4030 , HMS4030D , HMS40N10D .

History: PHX14NQ20T | VBZE20P03 | 7N65KG-TF3T-T | NTLUD3A260PZ | GSM9435WS | AP30P10GP-HF | 2SK844

Keywords - HMS29N65F MOSFET datasheet

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