HMS29N65F Datasheet. Specs and Replacement
Type Designator: HMS29N65F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO220F
HMS29N65F substitution
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HMS29N65F datasheet
hms29n65 hms29n65d hms29n65f.pdf
HMS29N65/HMS29N65D/HMS29N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 96 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu... See More ⇒
Detailed specifications: HMS25N65D, HMS25N65F, HMS28N65, HMS28N65D, HMS28N65F, HMS28N65T, HMS29N65, HMS29N65D, AO3400A, HMS3205, HMS3205D, HMS35DN10DA, HMS35N10K, HMS38N60T, HMS4030, HMS4030D, HMS40N10D
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