All MOSFET. HMS4260 Datasheet

 

HMS4260 Datasheet and Replacement


   Type Designator: HMS4260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: SOP8
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HMS4260 Datasheet (PDF)

 ..1. Size:594K  cn hmsemi
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HMS4260

HMS4260 N-Channel Super Trench Power MOSFET Description The HMS4260 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectif

 8.1. Size:658K  cn hmsemi
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HMS4260

HMS4264 N-Channel Super Trench Power MOSFET Description The HMS4264 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectif

 9.1. Size:553K  cn hmsemi
 hms4296.pdf pdf_icon

HMS4260

HMS4296N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio

 9.2. Size:593K  cn hmsemi
 hms4294.pdf pdf_icon

HMS4260

N-Channel Super Trench Power MOSFET Description The HMS4294 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio

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History: CHM85A3PAGP | ALD1103DB | SML100L16 | SQ9407EY-T1 | TK7P65W | SFFX054Z

Keywords - HMS4260 MOSFET datasheet

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