HMS4260 datasheet, аналоги, основные параметры

Наименование производителя: HMS4260  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 680 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm

Тип корпуса: SOP8

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Аналог (замена) для HMS4260

- подборⓘ MOSFET транзистора по параметрам

 

HMS4260 даташит

 ..1. Size:594K  cn hmsemi
 hms4260.pdf pdf_icon

HMS4260

HMS4260 N-Channel Super Trench Power MOSFET Description The HMS4260 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching and synchronous rectif

 8.1. Size:658K  cn hmsemi
 hms4264.pdf pdf_icon

HMS4260

HMS4264 N-Channel Super Trench Power MOSFET Description The HMS4264 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching and synchronous rectif

 9.1. Size:553K  cn hmsemi
 hms4296.pdf pdf_icon

HMS4260

HMS4296 N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio

 9.2. Size:593K  cn hmsemi
 hms4294.pdf pdf_icon

HMS4260

N-Channel Super Trench Power MOSFET Description The HMS4294 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio

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