HMS4260 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HMS4260
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 680 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: SOP8
Аналог (замена) для HMS4260
HMS4260 Datasheet (PDF)
hms4260.pdf

HMS4260 N-Channel Super Trench Power MOSFET Description The HMS4260 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectif
hms4264.pdf

HMS4264 N-Channel Super Trench Power MOSFET Description The HMS4264 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectif
hms4296.pdf

HMS4296N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
hms4294.pdf

N-Channel Super Trench Power MOSFET Description The HMS4294 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
Другие MOSFET... HMS3205D , HMS35DN10DA , HMS35N10K , HMS38N60T , HMS4030 , HMS4030D , HMS40N10D , HMS4110T , 8N60 , HMS4264 , HMS4290 , HMS4294 , HMS4296 , HMS4296B , HMS4438 , HMS4444A , HMS4454 .



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
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