HMS47N65A MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS47N65A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO3P
HMS47N65A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS47N65A Datasheet (PDF)
hms47n65a.pdf
HMS47N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 80 m gate charge. This super junction MOSFET fits the industrys ID AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features
hms47n60a.pdf
HMS47N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 70 m gate charge. This super junction MOSFET fits the industrys ID AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: TSA82N25M
