All MOSFET. HMS4N70I Datasheet

 

HMS4N70I Datasheet and Replacement


   Type Designator: HMS4N70I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO251
 

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HMS4N70I Datasheet (PDF)

 ..1. Size:1172K  cn hmsemi
 hms4n70k hms4n70i.pdf pdf_icon

HMS4N70I

HMS4N70K,HMS4N70I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DStechnology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industrys ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

 7.1. Size:1041K  cn hmsemi
 hms4n70 hms4n70d hms4n70f.pdf pdf_icon

HMS4N70I

HMS4N70,HMS4N70D,HMS4N70FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON)TYP. 1200 m gate charge. This super junction MOSFET fits the industrys ID 4 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

Datasheet: HMS4454 , HMS45N15D , HMS45N15K , HMS47N60A , HMS47N65A , HMS4N70 , HMS4N70D , HMS4N70F , IRF840 , HMS4N70K , HMS50N12DA , HMS50N15LD , HMS5N90I , HMS5N90K , HMS60N04EQ , HMS60N06D , HMS60N10D .

History: RU2H30R | AP10P10GJ-HF | 2SK1605 | R6524KNX | SSP65R190S2E | R6524ENZ1 | BUK9Y153-100E

Keywords - HMS4N70I MOSFET datasheet

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