All MOSFET. HMS50N15LD Datasheet

 

HMS50N15LD Datasheet and Replacement


   Type Designator: HMS50N15LD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 192 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: DFN5X6-8L
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HMS50N15LD Datasheet (PDF)

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HMS50N15LD

HMS50N15LD N-Channel Super Trench Power MOSFET Description The HMS50N15LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti

 7.1. Size:417K  cn hmsemi
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HMS50N15LD

N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =120V,ID =50A frequency switching performance. Both conduction and RDS(ON)=10m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS(ON)=12m (typical) @ VG

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History: CHM85A3PAGP | STU20L01 | SFFX054Z

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