HMS7N70I MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS7N70I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 28 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm
Package: TO251
HMS7N70I Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS7N70I Datasheet (PDF)
hms7n70i hms7n70k.pdf
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hms7n65i hms7n65k.pdf
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N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe
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