All MOSFET. HMS80N10D Datasheet

 

HMS80N10D Datasheet and Replacement


   Type Designator: HMS80N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 354 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO263
      - MOSFET Cross-Reference Search

 

HMS80N10D Datasheet (PDF)

 ..1. Size:725K  cn hmsemi
hms80n10d.pdf pdf_icon

HMS80N10D

HMS80N10DN-Channel Super Trench Power MOSFET Description The HMS80N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

 6.1. Size:914K  cn hmsemi
hms80n10ka.pdf pdf_icon

HMS80N10D

HMS80N10KAN-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 6.2. Size:995K  cn hmsemi
hms80n10.pdf pdf_icon

HMS80N10D

HMS80N10N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

 6.3. Size:574K  cn hmsemi
hms80n10al.pdf pdf_icon

HMS80N10D

HMS80N10ALN-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFPC50APBF | AON6794 | CED05N8 | IRLR024 | DMN61D9UW | MC08N005C | BL10N70-A

Keywords - HMS80N10D MOSFET datasheet

 HMS80N10D cross reference
 HMS80N10D equivalent finder
 HMS80N10D lookup
 HMS80N10D substitution
 HMS80N10D replacement

 

 
Back to Top

 


 
.