Справочник MOSFET. HMS80N10D

 

HMS80N10D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HMS80N10D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 354 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

HMS80N10D Datasheet (PDF)

 ..1. Size:725K  cn hmsemi
 hms80n10d.pdf pdf_icon

HMS80N10D

HMS80N10DN-Channel Super Trench Power MOSFET Description The HMS80N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

 6.1. Size:914K  cn hmsemi
 hms80n10ka.pdf pdf_icon

HMS80N10D

HMS80N10KAN-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 6.2. Size:995K  cn hmsemi
 hms80n10.pdf pdf_icon

HMS80N10D

HMS80N10N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

 6.3. Size:574K  cn hmsemi
 hms80n10al.pdf pdf_icon

HMS80N10D

HMS80N10ALN-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

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History: PMXB360ENEA | BSC032N03SG | PMXB350UPE | BF964S | VEC2415 | NCE65TF099 | UPA2732UT1A

 

 
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