HMS85N03ED Datasheet. Specs and Replacement
Type Designator: HMS85N03ED 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 807 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: DFN5X6-8L
HMS85N03ED substitution
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HMS85N03ED datasheet
hms85n03ed.pdf
HMS85N03ED N-Channel Super Trench Power MOSFET Description The HMS85N03ED uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒
hms85n95 hms85n95d.pdf
HMS85N95, HMS85N95D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extremel... See More ⇒
Detailed specifications: HMS7N70K, HMS80N06D, HMS80N10, HMS80N10AL, HMS80N10D, HMS80N10KA, HMS80N85, HMS80N85D, IRFP250N, HMS85N95, HMS85N95D, HMS8N50I, HMS8N50K, HMS8N60, HMS8N60D, HMS8N60F, HMS8N60I
Keywords - HMS85N03ED MOSFET specs
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