HMS8N70F MOSFET Datasheet: N-Ch, 700V, 8A. Full specification with pinout and replacement list

HMS8N70F Specs and Replacement

   Type Designator: HMS8N70F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 31.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220F

HMS8N70F substitution

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HMS8N70F datasheet

..1. Size:965K cn hmsemi
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HMS8N70D,HMS8N70,HMS8N70F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 700 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app... See More ⇒

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HMS8N70I,HMS8N70K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 700 V DS technology and design to provide excellent RDS(ON) with low R 540 m DS(ON) TYP. gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic... See More ⇒

9.1. Size:757K cn hmsemi
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HMS8N60I, HMS8N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati... See More ⇒

9.2. Size:933K cn hmsemi
hms8n65 hms8n65f hms8n65d.pdf pdf_icon

HMS8N65D, HMS8N65, HMS8N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic... See More ⇒