All MOSFET. HMS90N04D Datasheet

 

HMS90N04D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HMS90N04D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34.8 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 773 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: DFN5X6-8L

 HMS90N04D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HMS90N04D Datasheet (PDF)

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 hms90n04d.pdf

HMS90N04D HMS90N04D

HMS90N04DN-Channel Super Trench Power MOSFET Description General Features The HMS90N04D uses Super Trench technology that is VDS =40V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.2m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.3m (typical) @ VGS=4.5V switching power losses are minimized due to an extr

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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