HMS90N04D Datasheet. Specs and Replacement

Type Designator: HMS90N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 34.8 nC

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 773 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: DFN5X6-8L

HMS90N04D substitution

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HMS90N04D datasheet

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HMS90N04D

HMS90N04D N-Channel Super Trench Power MOSFET Description General Features The HMS90N04D uses Super Trench technology that is VDS =40V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.2m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.3m (typical) @ VGS=4.5V switching power losses are minimized due to an extr... See More ⇒

Detailed specifications: HMS8N65F, HMS8N65I, HMS8N65K, HMS8N70, HMS8N70D, HMS8N70F, HMS8N70I, HMS8N70K, 5N65, AO3413L, CSD30N70, FNK6075K, KMK1265F, ZM075N03D, YSP040N010T1A, YSK038N010T1A, YSF040N010T1A

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