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SVG104R5NT Specs and Replacement


   Type Designator: SVG104R5NT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 864 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
 

 SVG104R5NT substitution

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SVG104R5NT datasheet

 ..1. Size:276K  1
 svg104r5nt svg104r5ns.pdf pdf_icon

SVG104R5NT

Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2 field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1 especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.... See More ⇒

 ..2. Size:413K  silan
 svg104r5nt svg104r5ns svg104r5nstr svg104r5nf svg104r5nkl svg104r5ns6 svg104r5ns6tr.pdf pdf_icon

SVG104R5NT

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 7.1. Size:385K  silan
 svg104r0nt svg104r0ns svg104r0nstr.pdf pdf_icon

SVG104R5NT

SVG104R0NT(S) 120A 100V N 2 SVG104R0NT(S) N MOS LVMOS 1 3 ... See More ⇒

 7.2. Size:422K  silan
 svg104r2nt.pdf pdf_icon

SVG104R5NT

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Detailed specifications: YSF040N010T1A , 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , GWM13S65YRY , GWM13S65YRX , RX80N07 , 2SK3568 , SVG104R5NS , VS1401ATH , HCCW120R080H1 , HCCZ120R080H1 , VS3620DE-G , VS3620DP-G , VS3622DP , VS3622DP2 .

History: APM3055L

Keywords - SVG104R5NT MOSFET specs

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