All MOSFET. SVG104R5NT Datasheet


SVG104R5NT MOSFET. Datasheet pdf. Equivalent

Type Designator: SVG104R5NT

Marking Code: 104R5NT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 114 nC

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 864 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: TO220

SVG104R5NT Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SVG104R5NT Datasheet (PDF)

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svg104r5nt svg104r5ns.pdf


SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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