SVG104R5NS Datasheet and Replacement
Type Designator: SVG104R5NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 864 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO263
SVG104R5NS substitution
SVG104R5NS Datasheet (PDF)
svg104r5nt svg104r5ns.pdf

SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
svg104r5nt svg104r5ns svg104r5nstr svg104r5nf svg104r5nkl svg104r5ns6 svg104r5ns6tr.pdf

SVG104R5NT(S)(F)(KL)(S6) 120A100V N 2SVG104R5NT(S)(F)(KL)(S6) N MOS 1 LVMOS 3
svg104r0nt svg104r0ns svg104r0nstr.pdf

SVG104R0NT(S) 120A100V N 2SVG104R0NT(S) N MOS LVMOS 1 3
Datasheet: 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , GWM13S65YRY , GWM13S65YRX , RX80N07 , SVG104R5NT , STP80NF70 , VS1401ATH , HCCW120R080H1 , HCCZ120R080H1 , VS3620DE-G , VS3620DP-G , VS3622DP , VS3622DP2 , VS3622DP3 .
History: BUK200-50X | FIR11NS65AFG | BUK755R4-100E | HM4409 | HGB035N08A | IXTU4N60P | LSC60R280HT
Keywords - SVG104R5NS MOSFET datasheet
SVG104R5NS cross reference
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History: BUK200-50X | FIR11NS65AFG | BUK755R4-100E | HM4409 | HGB035N08A | IXTU4N60P | LSC60R280HT



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