SVG104R5NS PDF and Equivalents Search

 

SVG104R5NS Specs and Replacement


   Type Designator: SVG104R5NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 864 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263
 

 SVG104R5NS substitution

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SVG104R5NS datasheet

 ..1. Size:276K  1
svg104r5nt svg104r5ns.pdf pdf_icon

SVG104R5NS

Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2 field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1 especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.... See More ⇒

 7.1. Size:385K  silan
svg104r0nt svg104r0ns svg104r0nstr.pdf pdf_icon

SVG104R5NS

SVG104R0NT(S) 120A 100V N 2 SVG104R0NT(S) N MOS LVMOS 1 3 ... See More ⇒

 7.2. Size:422K  silan
svg104r2nt.pdf pdf_icon

SVG104R5NS

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Detailed specifications: 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , GWM13S65YRY , GWM13S65YRX , RX80N07 , SVG104R5NT , 10N65 , VS1401ATH , HCCW120R080H1 , HCCZ120R080H1 , VS3620DE-G , VS3620DP-G , VS3622DP , VS3622DP2 , VS3622DP3 .

Keywords - SVG104R5NS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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