SVG104R5NS MOSFET. Datasheet pdf. Equivalent
Type Designator: SVG104R5NS
Marking Code: 104R5NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 114 nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 864 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: TO263
SVG104R5NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVG104R5NS Datasheet (PDF)
svg104r5nt svg104r5ns.pdf
SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
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