VS3622DP3 MOSFET. Datasheet pdf. Equivalent
Type Designator: VS3622DP3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5X6
VS3622DP3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS3622DP3 Datasheet (PDF)
vs3622dp3.pdf
VS3622DP330V/40A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 8.7 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 40 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking P
vs3622dp2.pdf
VS3622DP230V/42A Dual Asymmetric N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 7.5 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 11 m Enhancement modeI D 42 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiencyPDFN5x6 Dual Opt2 100% Avalanche Tested Pb-free lead plating; RoHS compl
vs3622dp.pdf
VS3622DP30V/40A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 8.7 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 40 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested PDFN5x6 Dual Pb-free lead plating; RoHS compliantPart ID Package Type Markin
vs3622de.pdf
VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 10 m Dual N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 14 m Enhancement mode I D 35 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel
vs3622de.pdf
VS3622DE30V/35A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 10 m Dual N-Channel, 5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 14 m Enhancement modeI D 35 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Pac
vs3622db.pdf
VS3622DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.2 6 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 11 8.4 m High Current CapabilityI D 28 30 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate ChargeDFN3x3 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622DB DFN3x
vs3622ds.pdf
VS3622DS30V/12A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 10 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 14 m Enhancement modeI D 12 A Low on-resistance RDS(on) @ VGS=4.5 V High EffectiveSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622DS SOP8 3622DS 300
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
