All MOSFET. VS3638DE-G Datasheet

 

VS3638DE-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS3638DE-G
   Marking Code: 3638DE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.3 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: PDFN3333

 VS3638DE-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS3638DE-G Datasheet (PDF)

 ..1. Size:1065K  cn vgsemi
 vs3638de-g.pdf

VS3638DE-G VS3638DE-G

VS3638DE-G30V/15A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 12 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 20 m Enhancement modeI D(Silicon Limited) 27 A VitoMOS TechnologyI D(Package Limited) 15 A Fast Switching and High efficiencyPDFN3333 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Pac

 8.1. Size:1664K  cn vgsemi
 vs3638ge.pdf

VS3638DE-G VS3638DE-G

VS3638GE30V/23A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 11 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 20 m VitoMOS TechnologyI D(Silicon Limited) 40 A Fast Switching and High efficiencyI D(Package Limited) 23 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3638GE PDFN3333 3638GE

 8.2. Size:1074K  cn vgsemi
 vs3638ga.pdf

VS3638DE-G VS3638DE-G

VS3638GA30V/12A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 10 mR DS(on),TYP@ VGS=4.5 V 18 m Enhancement mode VitoMOS Technology I D 12 A Low Gate ChargeDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3638GA DFN2x2x0.75-6L 3638 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol Parameter Ratin

 9.1. Size:836K  cn vgsemi
 vs3633ge.pdf

VS3638DE-G VS3638DE-G

VS3633GE30V/24A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 9.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 15 m VitoMOS TechnologyI D(Silicon Limited) 32 A Fast Switching and High efficiencyI D(Package Limited) 24 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3633GE PDFN3333 3633G

 9.2. Size:992K  cn vgsemi
 vs3633ga.pdf

VS3638DE-G VS3638DE-G

VS3633GA30V/12A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 11 mR DS(on),TYP@ VGS=4.5 V 16 m Enhancement mode VitoMOS Technology I D 12 A Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3633GA DFN2x2x0.75-6L 3633 3000PCS/ReelMaximum ratings, at TA =25C,

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: DMP2215L

 

 
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