All MOSFET. VS4620DE-G Datasheet

 

VS4620DE-G Datasheet and Replacement


   Type Designator: VS4620DE-G
   Marking Code: 4620DE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PDFN3333
 

 VS4620DE-G substitution

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VS4620DE-G Datasheet (PDF)

 ..1. Size:955K  cn vgsemi
 vs4620de-g.pdf pdf_icon

VS4620DE-G

VS4620DE-G40V/14A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 9 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 12 m Enhancement modeI D(Silicon Limited) 47 A VitoMOS TechnologyI D(Package Limited) 14 A 100% Avalanche Tested,100% Rg TestedPDFN3333 Dual Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPa

 7.1. Size:962K  cn vgsemi
 vs4620dp-g.pdf pdf_icon

VS4620DE-G

VS4620DP-G40V/36A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 7 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 10 m Enhancement modeI D(Silicon Limited) 48 A VitoMOS TechnologyI D(Package Limited) 36 A Fast Switching and High efficiencyPDFN5x6 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Packi

 7.2. Size:952K  cn vgsemi
 vs4620ds-g.pdf pdf_icon

VS4620DE-G

VS4620DS-G40V/11A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 8.1 m Enhancement modeR DS(on),TYP@ VGS=4.5V 11 m VitoMOS TechnologyI D 11 A 100% Avalanche Tested,100% Rg TestedSOP8 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVS4620DS-G SOP8 4620DS 3000pcs/Reel

 8.1. Size:894K  cn vgsemi
 vs4620gd.pdf pdf_icon

VS4620DE-G

VS4620GD40V/29A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 7.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m VitoMOS TechnologI D(Wire bond Limited) 29 A 100% Avalanche Tested,100% Rg tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesTO-252Part ID Package Type Marking PackingVS4620GD TO-252 4620

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Keywords - VS4620DE-G MOSFET datasheet

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 VS4620DE-G equivalent finder
 VS4620DE-G lookup
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