ISW65R041CFD MOSFET. Datasheet pdf. Equivalent
Type Designator: ISW65R041CFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: TO247
ISW65R041CFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ISW65R041CFD Datasheet (PDF)
..1. Size:328K inchange semiconductor
isw65r041cfd.pdf
isw65r041cfd.pdf
isc N-Channel MOSFET Transistor ISW65R041CFDFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R 44m(Max)DS(on):100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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