All MOSFET. ISW65R041CFD Datasheet

 

ISW65R041CFD Datasheet and Replacement


   Type Designator: ISW65R041CFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO247
 

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ISW65R041CFD Datasheet (PDF)

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ISW65R041CFD

isc N-Channel MOSFET Transistor ISW65R041CFDFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R 44m(Max)DS(on):100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Datasheet: FDD6680S , FDD6692 , FDU6692 , FDH20N40 , FDP20N40 , FDH34N40 , FMV60N280S2HF , IRF3305B , IRF3205 , MDI5N40RH , MDP06N033TH , MDP06N090TH , MDP10N055TH , MDP12N50TH , MDP13N50TH , MDP18N50TH , MDP5N50TH .

History: NVMTS0D6N04C | SI7623DN

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