ISW65R041CFD PDF and Equivalents Search

 

ISW65R041CFD Specs and Replacement

Type Designator: ISW65R041CFD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: TO247

ISW65R041CFD substitution

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ISW65R041CFD datasheet

 ..1. Size:328K  inchange semiconductor
 isw65r041cfd.pdf pdf_icon

ISW65R041CFD

isc N-Channel MOSFET Transistor ISW65R041CFD FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R 44m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒

Detailed specifications: FDD6680S, FDD6692, FDU6692, FDH20N40, FDP20N40, FDH34N40, FMV60N280S2HF, IRF3305B, IRF3205, MDI5N40RH, MDP06N033TH, MDP06N090TH, MDP10N055TH, MDP12N50TH, MDP13N50TH, MDP18N50TH, MDP5N50TH

Keywords - ISW65R041CFD MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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