MDI5N40RH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDI5N40RH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 3.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6
Ohm
Package:
TO252
MDI5N40RH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDI5N40RH
Datasheet (PDF)
..1. Size:309K inchange semiconductor
mdi5n40rh.pdf 
isc N-Channel MOSFET Transistor MDI5N40RHFEATURESDrain Current : I = 3.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
7.1. Size:865K magnachip
mdd5n40rh mdi5n40th.pdf
MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachips MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) 1.6 and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur
7.2. Size:320K inchange semiconductor
mdi5n40th.pdf
isc N-Channel MOSFET Transistor MDI5N40THFEATURESDrain Current : I = 3.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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