All MOSFET. MDI5N40RH Datasheet

 

MDI5N40RH Datasheet and Replacement


   Type Designator: MDI5N40RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO252
 

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MDI5N40RH Datasheet (PDF)

 ..1. Size:309K  inchange semiconductor
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MDI5N40RH

isc N-Channel MOSFET Transistor MDI5N40RHFEATURESDrain Current : I = 3.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 7.1. Size:865K  magnachip
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MDI5N40RH

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6General Description Features The MDI5N40 / MDD5N40 use advanced VDS = 400V Magnachips MOSFET Technology, which provides ID = 3.4A @VGS = 10V low on-state resistance, high switching performance @VGS = 10V RDS(ON) 1.6 and excellent quality. MDI5N40 is suitable device for SMPS, HID and general pur

 7.2. Size:320K  inchange semiconductor
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MDI5N40RH

isc N-Channel MOSFET Transistor MDI5N40THFEATURESDrain Current : I = 3.4A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

Datasheet: FDD6692 , FDU6692 , FDH20N40 , FDP20N40 , FDH34N40 , FMV60N280S2HF , IRF3305B , ISW65R041CFD , IRF740 , MDP06N033TH , MDP06N090TH , MDP10N055TH , MDP12N50TH , MDP13N50TH , MDP18N50TH , MDP5N50TH , MDP7N50 .

History: TN2404KL | UT100N03-Q | HY6N60T | AONV420A70 | FDM606P | BSZ15DC02KD | SI3134KL3

Keywords - MDI5N40RH MOSFET datasheet

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