All MOSFET. MMD65R380QRH Datasheet

 

MMD65R380QRH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMD65R380QRH
   Marking Code: 65R380Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20.6 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 896 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO252

 MMD65R380QRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMD65R380QRH Datasheet (PDF)

 ..1. Size:1538K  magnachip
 mmd65r380qrh.pdf

MMD65R380QRH MMD65R380QRH

MMD65R380Q Datasheet MMD65R380Q 650V 0.38 N-channel MOSFET Description MMD65R380Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

 ..2. Size:310K  inchange semiconductor
 mmd65r380qrh.pdf

MMD65R380QRH MMD65R380QRH

isc N-Channel MOSFET Transistor MMD65R380QRHFEATURESDrain Current : I = 10.6A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 8.1. Size:2744K  1
 mmd65r900q.pdf

MMD65R380QRH MMD65R380QRH

MMD65R900Q Datasheet MMD65R900Q 650V 0.90 N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

 8.2. Size:1413K  1
 mmd65r600qrh.pdf

MMD65R380QRH MMD65R380QRH

MMD65R600Q Datasheet MMD65R600Q 650V 0.60 N-channel MOSFET Description MMD65R600Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

 8.3. Size:309K  inchange semiconductor
 mmd65r600qrh.pdf

MMD65R380QRH MMD65R380QRH

isc N-Channel MOSFET Transistor MMD65R600QRHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.4. Size:288K  inchange semiconductor
 mmd65r900qrh.pdf

MMD65R380QRH MMD65R380QRH

isc N-Channel MOSFET Transistor MMD65R900QRHFEATURESDrain Current : I =75A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =6.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: OSG60R040HF

 

 
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