Справочник MOSFET. MMD65R380QRH

 

MMD65R380QRH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MMD65R380QRH
   Маркировка: 65R380Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20.6 nC
   trⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 896 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

MMD65R380QRH Datasheet (PDF)

 ..1. Size:1538K  magnachip
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MMD65R380QRH

MMD65R380Q Datasheet MMD65R380Q 650V 0.38 N-channel MOSFET Description MMD65R380Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

 ..2. Size:310K  inchange semiconductor
mmd65r380qrh.pdfpdf_icon

MMD65R380QRH

isc N-Channel MOSFET Transistor MMD65R380QRHFEATURESDrain Current : I = 10.6A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 8.1. Size:2744K  1
mmd65r900q.pdfpdf_icon

MMD65R380QRH

MMD65R900Q Datasheet MMD65R900Q 650V 0.90 N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

 8.2. Size:1413K  1
mmd65r600qrh.pdfpdf_icon

MMD65R380QRH

MMD65R600Q Datasheet MMD65R600Q 650V 0.60 N-channel MOSFET Description MMD65R600Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

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History: STH33N20 | IRFS240

 

 
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