MMD65R380QRH. Аналоги и основные параметры
Наименование производителя: MMD65R380QRH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 83.3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 896 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: TO252
Аналог (замена) для MMD65R380QRH
- подборⓘ MOSFET транзистора по параметрам
MMD65R380QRH даташит
mmd65r380qrh.pdf
MMD65R380Q Datasheet MMD65R380Q 650V 0.38 N-channel MOSFET Description MMD65R380Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
mmd65r380qrh.pdf
isc N-Channel MOSFET Transistor MMD65R380QRH FEATURES Drain Current I = 10.6A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and
mmd65r900q.pdf
MMD65R900Q Datasheet MMD65R900Q 650V 0.90 N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
mmd65r600qrh.pdf
MMD65R600Q Datasheet MMD65R600Q 650V 0.60 N-channel MOSFET Description MMD65R600Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
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