MMD65R380QRH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MMD65R380QRH
Маркировка: 65R380Q
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 83.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 20.6 nC
trⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 896 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
MMD65R380QRH Datasheet (PDF)
mmd65r380qrh.pdf

MMD65R380Q Datasheet MMD65R380Q 650V 0.38 N-channel MOSFET Description MMD65R380Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
mmd65r380qrh.pdf

isc N-Channel MOSFET Transistor MMD65R380QRHFEATURESDrain Current : I = 10.6A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
mmd65r900q.pdf

MMD65R900Q Datasheet MMD65R900Q 650V 0.90 N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
mmd65r600qrh.pdf

MMD65R600Q Datasheet MMD65R600Q 650V 0.60 N-channel MOSFET Description MMD65R600Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
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History: STH33N20 | IRFS240



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