MME80R290PRH Datasheet and Replacement
Type Designator: MME80R290PRH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 181 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 56.5 nS
Cossⓘ - Output Capacitance: 1510 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO263
MME80R290PRH substitution
MME80R290PRH Datasheet (PDF)
mme80r290prh.pdf

MME80R290P Datasheet MME80R290P 800V 0.29 N-channel MOSFET Description MME80R290P is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mme80r290prh.pdf

isc N-Channel MOSFET Transistor MME80R290PRHFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
Datasheet: MMD60R580PBRH , MMD65R380QRH , MMD80R1K2PRH , MMD80R1K2QZRH , MMD80R900PCRH , MMD80R900QZRH , MME60R290QRH , MME65R280QRH , IRFP250N , MMF60R190QTH , MMF60R280QBTH , MMF60R580QTH , MMF65R600QTH , MMF80R450PBTH , MMF80R450QZTH , MMF80R900PCTH , MMF80R900QZTH .
History: STW33N60DM2 | CJ3406 | DH009N02P | STL23NM50N | SWB072R08ET | GSM4925WS | 4N80G-TND-R
Keywords - MME80R290PRH MOSFET datasheet
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History: STW33N60DM2 | CJ3406 | DH009N02P | STL23NM50N | SWB072R08ET | GSM4925WS | 4N80G-TND-R



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