All MOSFET. JFAM30N50E Datasheet

 

JFAM30N50E Datasheet and Replacement


   Type Designator: JFAM30N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO3P
 

 JFAM30N50E substitution

   - MOSFET ⓘ Cross-Reference Search

 

JFAM30N50E Datasheet (PDF)

 ..1. Size:724K  jiaensemi
 jfam30n50e.pdf pdf_icon

JFAM30N50E

JFAM30N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 7.1. Size:1315K  jiaensemi
 jfam30n60e.pdf pdf_icon

JFAM30N50E

JFAM30N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

Datasheet: JFAM20N50E , JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E , IRF530 , JFAM30N60E , JFAM50N50C , JFAM7N90C , JFFC10N65D , JFFC13N65D , JFFC20N65C , JFFC7N65E , JFFC8N65C .

Keywords - JFAM30N50E MOSFET datasheet

 JFAM30N50E cross reference
 JFAM30N50E equivalent finder
 JFAM30N50E lookup
 JFAM30N50E substitution
 JFAM30N50E replacement

 

 
Back to Top

 


 
.