All MOSFET. JFFC10N65D Datasheet

 

JFFC10N65D Datasheet and Replacement


   Type Designator: JFFC10N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 38.5 nC
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220F
 

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JFFC10N65D Datasheet (PDF)

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JFFC10N65D

JFFC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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JFFC10N65D

JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

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JFFC10N65D

JFFC13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.2. Size:861K  jiaensemi
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JFFC10N65D

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

Datasheet: JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E , JFAM30N50E , JFAM30N60E , JFAM50N50C , JFAM7N90C , IRLB4132 , JFFC13N65D , JFFC20N65C , JFFC7N65E , JFFC8N65C , JFFM13N50E , JFFM13N65D , JFFM20N60C , JFFM3N120E .

History: IRF8788PBF

Keywords - JFFC10N65D MOSFET datasheet

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