JFFC10N65D datasheet, аналоги, основные параметры

Наименование производителя: JFFC10N65D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 39 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 28 ns

Cossⓘ - Выходная емкость: 165 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm

Тип корпуса: TO220F

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Аналог (замена) для JFFC10N65D

- подборⓘ MOSFET транзистора по параметрам

 

JFFC10N65D даташит

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JFFC10N65D

JFFC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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JFFC10N65D

JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

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 jffc13n65d.pdf pdf_icon

JFFC10N65D

JFFC13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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 jfpc18n65c jffc18n65c.pdf pdf_icon

JFFC10N65D

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

ПОКАЗАТЬ ЕЩЁ

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