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JFFC8N65C Datasheet and Replacement


   Type Designator: JFFC8N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
   Package: TO220F
 

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JFFC8N65C Datasheet (PDF)

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JFFC8N65C

JFFC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

Datasheet: JFAM30N50E , JFAM30N60E , JFAM50N50C , JFAM7N90C , JFFC10N65D , JFFC13N65D , JFFC20N65C , JFFC7N65E , IRF1407 , JFFM13N50E , JFFM13N65D , JFFM20N60C , JFFM3N120E , JFFM3N150C , JFFM7N90C , JFHM20N60C , JFHM20N60E .

History: IRFP353R | JFFC18N65C | NTZD3155CT1G | 2SK2432 | APT20M34BFLL | SUN830D | IPP070N08N3

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