JFFC8N65C Datasheet. Specs and Replacement

Type Designator: JFFC8N65C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm

Package: TO220F

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JFFC8N65C datasheet

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JFFC8N65C

JFFC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s... See More ⇒

Detailed specifications: JFAM30N50E, JFAM30N60E, JFAM50N50C, JFAM7N90C, JFFC10N65D, JFFC13N65D, JFFC20N65C, JFFC7N65E, IRFP450, JFFM13N50E, JFFM13N65D, JFFM20N60C, JFFM3N120E, JFFM3N150C, JFFM7N90C, JFHM20N60C, JFHM20N60E

Keywords - JFFC8N65C MOSFET specs

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