JFFM7N90C Datasheet and Replacement
Type Designator: JFFM7N90C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm
Package: TO220F
JFFM7N90C substitution
JFFM7N90C Datasheet (PDF)
jfpc7n90c jffm7n90c.pdf

JFPC7N90C JFFM7N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU
jffm7n90c.pdf

JFFM7N90C 900V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s
jfpc7n60c jffm7n60c.pdf

JFPC7N60C JFFM7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 7A, 600V, RDS(on)typ. = 1.2@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, a
Datasheet: JFFC20N65C , JFFC7N65E , JFFC8N65C , JFFM13N50E , JFFM13N65D , JFFM20N60C , JFFM3N120E , JFFM3N150C , P0903BDG , JFHM20N60C , JFHM20N60E , JFHM30N50P , JFHM50N50C , JFHM9N150E , JFPC10N60C , JFFM10N60C , JFPC10N60CI .
History: SMM2348ES | WMS175N10LG4
Keywords - JFFM7N90C MOSFET datasheet
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History: SMM2348ES | WMS175N10LG4



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