JFHM30N50P Datasheet. Specs and Replacement
Type Designator: JFHM30N50P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO247
JFHM30N50P substitution
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JFHM30N50P datasheet
jfhm30n50p.pdf
JFHM30N50P 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
Detailed specifications: JFFM13N50E, JFFM13N65D, JFFM20N60C, JFFM3N120E, JFFM3N150C, JFFM7N90C, JFHM20N60C, JFHM20N60E, 5N60, JFHM50N50C, JFHM9N150E, JFPC10N60C, JFFM10N60C, JFPC10N60CI, JFPC10N65C, JFFC10N65C, JFPC10N65CI
Keywords - JFHM30N50P MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NTMFS4946N | CJB04N60A
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