All MOSFET. JFHM30N50P Datasheet

 

JFHM30N50P MOSFET. Datasheet pdf. Equivalent


   Type Designator: JFHM30N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 106 nC
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO247

 JFHM30N50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JFHM30N50P Datasheet (PDF)

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 jfhm30n50p.pdf

JFHM30N50P JFHM30N50P

JFHM30N50P 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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