All MOSFET. JFHM30N50P Datasheet

 

JFHM30N50P Datasheet and Replacement


   Type Designator: JFHM30N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO247
 

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JFHM30N50P Datasheet (PDF)

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JFHM30N50P

JFHM30N50P 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

Datasheet: JFFM13N50E , JFFM13N65D , JFFM20N60C , JFFM3N120E , JFFM3N150C , JFFM7N90C , JFHM20N60C , JFHM20N60E , 5N60 , JFHM50N50C , JFHM9N150E , JFPC10N60C , JFFM10N60C , JFPC10N60CI , JFPC10N65C , JFFC10N65C , JFPC10N65CI .

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