All MOSFET. JFFC10N65C Datasheet

 

JFFC10N65C Datasheet and Replacement


   Type Designator: JFFC10N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 136 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
   Package: TO220F
 

 JFFC10N65C substitution

   - MOSFET ⓘ Cross-Reference Search

 

JFFC10N65C Datasheet (PDF)

 ..1. Size:845K  jiaensemi
 jfpc10n65c jffc10n65c.pdf pdf_icon

JFFC10N65C

JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 5.1. Size:822K  jiaensemi
 jffc10n65d.pdf pdf_icon

JFFC10N65C

JFFC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.1. Size:827K  jiaensemi
 jffc13n65d.pdf pdf_icon

JFFC10N65C

JFFC13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.2. Size:861K  jiaensemi
 jfpc18n65c jffc18n65c.pdf pdf_icon

JFFC10N65C

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

SHOW MORE

Datasheet: JFHM20N60E , JFHM30N50P , JFHM50N50C , JFHM9N150E , JFPC10N60C , JFFM10N60C , JFPC10N60CI , JFPC10N65C , IRFB31N20D , JFPC10N65CI , JFPC10N65D , JFPC10N80C , JFFM10N80C , JFPC11N50C , JFFM11N50C , JFPC12N60C , JFFM12N60C .

Keywords - JFFC10N65C MOSFET datasheet

 JFFC10N65C cross reference
 JFFC10N65C equivalent finder
 JFFC10N65C lookup
 JFFC10N65C substitution
 JFFC10N65C replacement

 

 
Back to Top

 


 
.