Справочник MOSFET. JFFC10N65C

 

JFFC10N65C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: JFFC10N65C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 136 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.83 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для JFFC10N65C

   - подбор ⓘ MOSFET транзистора по параметрам

 

JFFC10N65C Datasheet (PDF)

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JFFC10N65C

JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

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JFFC10N65C

JFFC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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 jffc13n65d.pdf pdf_icon

JFFC10N65C

JFFC13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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 jfpc18n65c jffc18n65c.pdf pdf_icon

JFFC10N65C

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... JFHM20N60E , JFHM30N50P , JFHM50N50C , JFHM9N150E , JFPC10N60C , JFFM10N60C , JFPC10N60CI , JFPC10N65C , IRFB31N20D , JFPC10N65CI , JFPC10N65D , JFPC10N80C , JFFM10N80C , JFPC11N50C , JFFM11N50C , JFPC12N60C , JFFM12N60C .

History: WMM18N50C4 | SL120N03R | IRF8788PBF

 

 
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