All MOSFET. JFPC18N50C Datasheet

 

JFPC18N50C Datasheet and Replacement


   Type Designator: JFPC18N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220
 

 JFPC18N50C substitution

   - MOSFET ⓘ Cross-Reference Search

 

JFPC18N50C Datasheet (PDF)

 ..1. Size:889K  jiaensemi
jfpc18n50c jffm18n50c.pdf pdf_icon

JFPC18N50C

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 7.1. Size:503K  jiaensemi
jfpc18n60ci.pdf pdf_icon

JFPC18N50C

JFPC18N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.52@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 7.2. Size:862K  jiaensemi
jfpc18n60c jffm18n60c.pdf pdf_icon

JFPC18N50C

JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 7.3. Size:861K  jiaensemi
jfpc18n65c jffc18n65c.pdf pdf_icon

JFPC18N50C

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

Datasheet: JFPC13N50C , JFFM13N50C , JFPC13N60CI , JFPC13N65C , JFFC13N65C , JFPC13N65CI , JFPC16N50C , JFFM16N50C , IRF9640 , JFFM18N50C , JFPC18N60C , JFFM18N60C , JFPC18N60CI , JFPC18N65C , JFFC18N65C , JFPC18N65CI , JFPC20N50C .

History: STB40N20

Keywords - JFPC18N50C MOSFET datasheet

 JFPC18N50C cross reference
 JFPC18N50C equivalent finder
 JFPC18N50C lookup
 JFPC18N50C substitution
 JFPC18N50C replacement

 

 
Back to Top

 


 
.