JFPC18N50C Datasheet. Specs and Replacement

Type Designator: JFPC18N50C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO220

JFPC18N50C substitution

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JFPC18N50C datasheet

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JFPC18N50C

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf... See More ⇒

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JFPC18N50C

JFPC18N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.52 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs... See More ⇒

 7.2. Size:862K  jiaensemi
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JFPC18N50C

JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf... See More ⇒

 7.3. Size:861K  jiaensemi
jfpc18n65c jffc18n65c.pdf pdf_icon

JFPC18N50C

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf... See More ⇒

Detailed specifications: JFPC13N50C, JFFM13N50C, JFPC13N60CI, JFPC13N65C, JFFC13N65C, JFPC13N65CI, JFPC16N50C, JFFM16N50C, K2611, JFFM18N50C, JFPC18N60C, JFFM18N60C, JFPC18N60CI, JFPC18N65C, JFFC18N65C, JFPC18N65CI, JFPC20N50C

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