Справочник MOSFET. JFPC18N50C

 

JFPC18N50C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: JFPC18N50C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для JFPC18N50C

   - подбор ⓘ MOSFET транзистора по параметрам

 

JFPC18N50C Datasheet (PDF)

 ..1. Size:889K  jiaensemi
 jfpc18n50c jffm18n50c.pdf pdf_icon

JFPC18N50C

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 7.1. Size:503K  jiaensemi
 jfpc18n60ci.pdf pdf_icon

JFPC18N50C

JFPC18N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.52@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 7.2. Size:862K  jiaensemi
 jfpc18n60c jffm18n60c.pdf pdf_icon

JFPC18N50C

JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 7.3. Size:861K  jiaensemi
 jfpc18n65c jffc18n65c.pdf pdf_icon

JFPC18N50C

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... JFPC13N50C , JFFM13N50C , JFPC13N60CI , JFPC13N65C , JFFC13N65C , JFPC13N65CI , JFPC16N50C , JFFM16N50C , IRF9640 , JFFM18N50C , JFPC18N60C , JFFM18N60C , JFPC18N60CI , JFPC18N65C , JFFC18N65C , JFPC18N65CI , JFPC20N50C .

History: WML20N70D1 | SP8006 | WML10N60C4 | SWD4N65DA | WMM15N65C2 | WPM3012 | STH410N4F7-2AG

 

 
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