JFPC18N50C datasheet, аналоги, основные параметры

Наименование производителя: JFPC18N50C  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 245 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 55 ns

Cossⓘ - Выходная емкость: 200 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm

Тип корпуса: TO220

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Аналог (замена) для JFPC18N50C

- подборⓘ MOSFET транзистора по параметрам

 

JFPC18N50C даташит

 ..1. Size:889K  jiaensemi
 jfpc18n50c jffm18n50c.pdf pdf_icon

JFPC18N50C

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

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 jfpc18n60ci.pdf pdf_icon

JFPC18N50C

JFPC18N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.52 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 7.2. Size:862K  jiaensemi
 jfpc18n60c jffm18n60c.pdf pdf_icon

JFPC18N50C

JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 7.3. Size:861K  jiaensemi
 jfpc18n65c jffc18n65c.pdf pdf_icon

JFPC18N50C

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... JFPC13N50C, JFFM13N50C, JFPC13N60CI, JFPC13N65C, JFFC13N65C, JFPC13N65CI, JFPC16N50C, JFFM16N50C, K2611, JFFM18N50C, JFPC18N60C, JFFM18N60C, JFPC18N60CI, JFPC18N65C, JFFC18N65C, JFPC18N65CI, JFPC20N50C