JFFM18N60C Datasheet. Specs and Replacement
Type Designator: JFFM18N60C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ -
Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220F
- MOSFET ⓘ Cross-Reference Search
JFFM18N60C datasheet
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jffm13n65d.pdf 
JFFM13N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
Detailed specifications: JFPC13N65C, JFFC13N65C, JFPC13N65CI, JFPC16N50C, JFFM16N50C, JFPC18N50C, JFFM18N50C, JFPC18N60C, MMIS60R580P, JFPC18N60CI, JFPC18N65C, JFFC18N65C, JFPC18N65CI, JFPC20N50C, JFFM20N50C, JFPC20N60C, JFPC20N65C
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