JFFM18N60C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: JFFM18N60C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 200 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
Тип корпуса: TO220F
Аналог (замена) для JFFM18N60C
JFFM18N60C Datasheet (PDF)
jfpc18n60c jffm18n60c.pdf

JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
jfpc18n50c jffm18n50c.pdf

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
jfpc10n60c jffm10n60c.pdf

JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc
jfpc16n50c jffm16n50c.pdf

JFPC16N50C JFFM16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 16A, 500V, RDS(on)typ. = 0.33@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc
Другие MOSFET... JFPC13N65C , JFFC13N65C , JFPC13N65CI , JFPC16N50C , JFFM16N50C , JFPC18N50C , JFFM18N50C , JFPC18N60C , 2N7002 , JFPC18N60CI , JFPC18N65C , JFFC18N65C , JFPC18N65CI , JFPC20N50C , JFFM20N50C , JFPC20N60C , JFPC20N65C .
History: STM4880 | SWF2N65D | IRFB4510 | FDMS8350L | MTB22N04J3 | IPP062NE7N3
History: STM4880 | SWF2N65D | IRFB4510 | FDMS8350L | MTB22N04J3 | IPP062NE7N3



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