JFPC18N65CI Datasheet and Replacement. Cross Reference Search

JFPC18N65CI Datasheet (PDF)

..1. Size:488K jiaensemi
jfpc18n65ci.pdf pdf_icon

JFPC18N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A , 650V, RDS(on)typ. = 0.60@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and wit

4.1. Size:861K jiaensemi
jfpc18n65c jffc18n65c.pdf pdf_icon

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

6.1. Size:503K jiaensemi
jfpc18n60ci.pdf pdf_icon

JFPC18N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.52@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

6.2. Size:862K jiaensemi
jfpc18n60c jffm18n60c.pdf pdf_icon

JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .