All MOSFET. JFFM5N90C Datasheet

 

JFFM5N90C Datasheet and Replacement


   Type Designator: JFFM5N90C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO220F
 

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JFFM5N90C Datasheet (PDF)

 ..1. Size:560K  jiaensemi
 jfpc5n90c jffm5n90c.pdf pdf_icon

JFFM5N90C

JFPC5N90C JFFM5N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLASTELECTRONIC TRANSFORMERSWITCH MODE POWER SUP

 8.1. Size:555K  jiaensemi
 jfpc5n80c jffm5n80c.pdf pdf_icon

JFFM5N90C

JFPC5N80C JFFM5N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLASTELECTRONIC TRANSFORMERSWITCH MODE POWER SUP

 8.2. Size:829K  jiaensemi
 jfpc5n60c jffm5n60c.pdf pdf_icon

JFFM5N90C

JFPC5N60C JFFM5N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 4.5A , 600V, RDS(on)typ. = 2.0@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance

Datasheet: JFFM12N80C , JFPC5N60C , JFFM5N60C , JFPC5N65C , JFFC5N65C , JFPC5N80C , JFFM5N80C , JFPC5N90C , IRF640N , JFPC7N60C , JFFM7N60C , JFPC7N65C , JFFC7N65C , JFPC7N90C , JFPC8N60C , JFFM8N60C , JFPC8N65C .

History: SSM9971GM | STB70N10F4 | STH270N8F7-6 | IRL3103PBF | STB28N60M2

Keywords - JFFM5N90C MOSFET datasheet

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