JFPC7N60C
MOSFET. Datasheet pdf. Equivalent
Type Designator: JFPC7N60C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 192
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 96
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6
Ohm
Package:
TO220
JFPC7N60C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JFPC7N60C
Datasheet (PDF)
..1. Size:838K jiaensemi
jfpc7n60c jffm7n60c.pdf
JFPC7N60C JFFM7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 7A, 600V, RDS(on)typ. = 1.2@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, a
7.1. Size:836K jiaensemi
jfpc7n65c jffc7n65c.pdf
JFPC7N65C JFFC7N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 7A, 650V, RDS(on)typ. = 1.3@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, a
8.1. Size:566K jiaensemi
jfpc7n90c jffm7n90c.pdf
JFPC7N90C JFFM7N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU
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