All MOSFET. JFPC8N60C Datasheet

 

JFPC8N60C MOSFET. Datasheet pdf. Equivalent


   Type Designator: JFPC8N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220

 JFPC8N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JFPC8N60C Datasheet (PDF)

 ..1. Size:843K  jiaensemi
jfpc8n60c jffm8n60c.pdf

JFPC8N60C
JFPC8N60C

JFPC8N60C JFFM8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 8A, 600V, RDS(on)typ. = 0.90@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,

 7.1. Size:1072K  jiaensemi
jfpc8n65c.pdf

JFPC8N60C
JFPC8N60C

JFPC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 7.2. Size:740K  jiaensemi
jfpc8n65d.pdf

JFPC8N60C
JFPC8N60C

JFPC8N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 8.1. Size:547K  jiaensemi
jfpc8n80c jffm8n80c.pdf

JFPC8N60C
JFPC8N60C

JFPC8N80C JFFM8N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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