All MOSFET. JFFM8N60C Datasheet

 

JFFM8N60C Datasheet and Replacement


   Type Designator: JFFM8N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F
 

 JFFM8N60C substitution

   - MOSFET ⓘ Cross-Reference Search

 

JFFM8N60C Datasheet (PDF)

 ..1. Size:843K  jiaensemi
 jfpc8n60c jffm8n60c.pdf pdf_icon

JFFM8N60C

JFPC8N60C JFFM8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 8A, 600V, RDS(on)typ. = 0.90@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,

 8.1. Size:547K  jiaensemi
 jfpc8n80c jffm8n80c.pdf pdf_icon

JFFM8N60C

JFPC8N80C JFFM8N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

Datasheet: JFPC5N90C , JFFM5N90C , JFPC7N60C , JFFM7N60C , JFPC7N65C , JFFC7N65C , JFPC7N90C , JFPC8N60C , IRFB4110 , JFPC8N65C , JFPC8N65D , JFPC8N80C , JFFM8N80C , JFPC9N50C , JFFM9N50C , JFPC9N90C , JFFM9N90C .

History: WMO100N07T1

Keywords - JFFM8N60C MOSFET datasheet

 JFFM8N60C cross reference
 JFFM8N60C equivalent finder
 JFFM8N60C lookup
 JFFM8N60C substitution
 JFFM8N60C replacement

 

 
Back to Top

 


 
.