All MOSFET. JFFM9N50C Datasheet

 

JFFM9N50C MOSFET. Datasheet pdf. Equivalent


   Type Designator: JFFM9N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F

 JFFM9N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JFFM9N50C Datasheet (PDF)

 ..1. Size:845K  jiaensemi
 jfpc9n50c jffm9n50c.pdf

JFFM9N50C JFFM9N50C

JFPC9N50C JFFM9N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 9A, 500V, RDS(on)typ. = 0.85@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,

 8.1. Size:563K  jiaensemi
 jfpc9n90c jffm9n90c.pdf

JFFM9N50C JFFM9N50C

JFPC9N90C JFFM9N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

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History: KCB3008A | JST60N30T2 | IPS60R280PFD7S

 

 
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